| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| ADAT |
BODY WIDTH |
0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+70.0 DEG CELSIUS |
| CSWJ |
WORD QUANTITY (NON-CORE) |
32 |
| ADAQ |
BODY LENGTH |
0.870 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| ADAU |
BODY HEIGHT |
0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.5 VOLTS MAXIMUM POWER SOURCE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
332.8 MILLIWATTS |
| CRHL |
BIT QUANTITY (NON-CORE) |
256 |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| CQZP |
INPUT CIRCUIT PATTERN |
6 INPUT |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| CQSJ |
INCLOSURE MATERIAL |
PLASTIC |
| CBBL |
FEATURES PROVIDED |
W/ENABLE AND EXPANDABLE AND PROGRAMMABLE AND HIGH SPEED AND POSITIVE OUTPUTS AND MONOLITHIC AND HERMETICALLY SEALED AND W/OPEN COLLECTOR |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |