| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MINIMUM POWER SOURCE AND 25.0 VOLTS MAXIMUM POWER SOURCE |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+70.0 DEG CELSIUS |
| CZEQ |
TIME RATING PER CHACTERISTIC |
50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CBBL |
FEATURES PROVIDED |
MONOLITHIC AND DYNAMIC AND W/STROBE AND HERMETICALLY SEALED AND W/ENABLE |
| AFJQ |
STORAGE TEMP RANGE |
-55.0/+150.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CRHL |
BIT QUANTITY (NON-CORE) |
4096 |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| TEST |
TEST DATA DOCUMENT |
21101-49A0295 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.25 WATTS |
| ADAQ |
BODY LENGTH |
0.780 INCHES MINIMUM AND 0.820 INCHES MAXIMUM |
| ADAT |
BODY WIDTH |
0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.185 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
10 INPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |