| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
1.290 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.150 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
15.0 VOLTS MAXIMUM POWER SOURCE |
| ADAT |
BODY WIDTH |
0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-3 MIL-M-38510 |
| TEST |
TEST DATA DOCUMENT |
82577-932626 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CZEQ |
TIME RATING PER CHACTERISTIC |
1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
200.0 MILLIWATTS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP |
INPUT CIRCUIT PATTERN |
20 INPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CBBL |
FEATURES PROVIDED |
POSITIVE OUTPUTS AND SYNCHRONOUS AND ASYNCHRONOUS AND MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE |