| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CQZP |
INPUT CIRCUIT PATTERN |
11 INPUT |
| ADAQ |
BODY LENGTH |
0.825 INCHES MINIMUM AND 0.835 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| AFGA |
OPERATING TEMP RANGE |
-10.0/+80.0 DEG CELSIUS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CBBL |
FEATURES PROVIDED |
MONOLITHIC AND DC COUPLED AND W/DECODED OUTPUT AND W/ENABLE AND POSITIVE OUTPUTS AND LOW POWER |
| CZEQ |
TIME RATING PER CHACTERISTIC |
350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM POWER SOURCE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CRHL |
BIT QUANTITY (NON-CORE) |
1024 |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| ADAU |
BODY HEIGHT |
0.165 INCHES NOMINAL |
| CQSJ |
INCLOSURE MATERIAL |
PLASTIC |
| ADAT |
BODY WIDTH |
0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CSWJ |
WORD QUANTITY (NON-CORE) |
256 |