| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
1.140 INCHES MINIMUM AND 1.290 INCHES MAXIMUM |
| ADAT |
BODY WIDTH |
0.515 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
12 INPUT |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-3 MIL-M-38510 |
| CZEQ |
TIME RATING PER CHACTERISTIC |
90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| ADAU |
BODY HEIGHT |
0.120 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CBBL |
FEATURES PROVIDED |
BIPOLAR AND POSITIVE OUTPUTS AND PROGRAMMABLE AND MONOLITHIC AND HERMETICALLY SEALED AND 3-STATE OUTPUT |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.5 VOLTS MAXIMUM POWER SOURCE |
| CRHL |
BIT QUANTITY (NON-CORE) |
4096 |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CSWJ |
WORD QUANTITY (NON-CORE) |
512 |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
700.0 MILLIWATTS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |