| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| ADAQ |
BODY LENGTH |
1.290 INCHES MAXIMUM |
| CRHL |
BIT QUANTITY (NON-CORE) |
8192 |
| ADAU |
BODY HEIGHT |
0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ADAT |
BODY WIDTH |
0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
MONOLITHIC AND 3-STATE OUTPUT AND PROGRAMMABLE AND HERMETICALLY SEALED AND PROGRAMMED |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+70.0 DEG CELSIUS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-3 MIL-M-38510 |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM POWER SOURCE |
| CQZP |
INPUT CIRCUIT PATTERN |
18 INPUT |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
13973-839201-0018 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CSWJ |
WORD QUANTITY (NON-CORE) |
1024 |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |