| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| ADAT |
BODY WIDTH |
0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
2 GATE, NOR |
| ADAQ |
BODY LENGTH |
0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND W/BUFFERED OUTPUT AND BURN IN AND MONOLITHIC |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
400.0 MILLIWATTS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CQZP |
INPUT CIRCUIT PATTERN |
DUAL 4 INPUT |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CZEQ |
TIME RATING PER CHACTERISTIC |
48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| ADAU |
BODY HEIGHT |
0.185 INCHES MAXIMUM |