| ADAT |
BODY WIDTH |
0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CQZP |
INPUT CIRCUIT PATTERN |
11 INPUT |
| CRHL |
BIT QUANTITY (NON-CORE) |
8192 |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
15.0 VOLTS MAXIMUM POWER SOURCE |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+125.0 DEG CELSIUS |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+70.0 DEG CELSIUS |
| ADAU |
BODY HEIGHT |
0.205 INCHES MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.5 WATTS |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| ADAQ |
BODY LENGTH |
1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
W/ENABLE AND PROGRAMMABLE AND ERASABLE AND HERMETICALLY SEALED AND 3-STATE OUTPUT AND ULTRAVIOLET ERASABLE |
| CSWJ |
WORD QUANTITY (NON-CORE) |
1024 |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CZEQ |
TIME RATING PER CHACTERISTIC |
450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |