| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+70.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| CQZP |
INPUT CIRCUIT PATTERN |
14 INPUT |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ |
TIME RATING PER CHACTERISTIC |
350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CRHL |
BIT QUANTITY (NON-CORE) |
16384 |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| ADAQ |
BODY LENGTH |
1.230 INCHES MAXIMUM |
| AGAV |
END ITEM IDENTIFICATION |
SPECTRUM ANAL 28480 |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND 3-STATE OUTPUT AND HIGH PERFORMANCE AND LOW POWER AND PROGRAMMED AND HIGH IMPEDANCE AND WIRE-OR OUTPUTS |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| CSWJ |
WORD QUANTITY (NON-CORE) |
2048 |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| ADAT |
BODY WIDTH |
0.580 INCHES MINIMUM AND 0.620 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.150 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |