| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| ADAQ |
BODY LENGTH |
1.185 INCHES MINIMUM AND 1.215 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
12 INPUT |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+70.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
525.0 MILLIWATTS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
88818-A398A033T1031 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CBBL |
FEATURES PROVIDED |
POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE AND ERASABLE AND LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED AND PROGRAMMABLE AND PROGRAMMED |
| CRHL |
BIT QUANTITY (NON-CORE) |
16384 |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| ADAT |
BODY WIDTH |
0.570 INCHES MINIMUM AND 0.605 INCHES MAXIMUM |
| CSWJ |
WORD QUANTITY (NON-CORE) |
2048 |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| ADAU |
BODY HEIGHT |
0.145 INCHES MAXIMUM |
| AGAV |
END ITEM IDENTIFICATION |
ANADIGTESTER E/I FSCM 88818 |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CZEQ |
TIME RATING PER CHACTERISTIC |
450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |