| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
1.290 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
11 INPUT |
| ADAU |
BODY HEIGHT |
0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ADAT |
BODY WIDTH |
0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883STANDARD STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| CBBL |
FEATURES PROVIDED |
W/BUFFERED OUTPUT AND PROGRAMMED AND W/DECODED OUTPUT AND W/ENABLE AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT |
| CZEQ |
TIME RATING PER CHACTERISTIC |
120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CRHL |
BIT QUANTITY (NON-CORE) |
16384 |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CSWJ |
WORD QUANTITY (NON-CORE) |
2048 |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.3 VOLTS MINIMUM POWER SOURCE AND 26.5 VOLTS MAXIMUM POWER SOURCE |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |