| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND W/ENABLE AND MONOLITHIC AND STATIC OPERATION |
| ADAU |
BODY HEIGHT |
0.185 INCHES NOMINAL |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-3.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CQZP |
INPUT CIRCUIT PATTERN |
15 INPUT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| ZZZK |
SPECIFICATION/STANDARD DATA |
81349-MIL-M-38510/238 GOVERNMENT SPECIFICATION |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.2 WATTS |
| CSWJ |
WORD QUANTITY (NON-CORE) |
4096 |
| CRHL |
BIT QUANTITY (NON-CORE) |
4096 |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| TTQY |
TERMINAL TYPE AND QUANTITY |
18 PRINTED CIRCUIT |
| CZEQ |
TIME RATING PER CHACTERISTIC |
45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| ADAQ |
BODY LENGTH |
0.960 INCHES MAXIMUM |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-6 MIL-M-38510 |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |