| CBBL |
FEATURES PROVIDED |
W/ENABLE AND STATIC OPERATION AND HERMETICALLY SEALED AND LOW POWER |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| ADAU |
BODY HEIGHT |
0.130 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+70.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| AGAV |
END ITEM IDENTIFICATION |
TELETYPEWRITER SET AN/UGC-136AX |
| CQZP |
INPUT CIRCUIT PATTERN |
15 INPUT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
0.870 INCHES MINIMUM AND 0.920 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM POWER SOURCE |
| CSWJ |
WORD QUANTITY (NON-CORE) |
4096 |
| CRHL |
BIT QUANTITY (NON-CORE) |
4096 |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| TEST |
TEST DATA DOCUMENT |
00724-72-00982 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| TTQY |
TERMINAL TYPE AND QUANTITY |
18 PRINTED CIRCUIT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| ADAT |
BODY WIDTH |
0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |