| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| PRMT |
PRECIOUS MATERIAL |
GOLD |
| CWSG |
TERMINAL SURFACE TREATMENT |
GOLD |
| CZEQ |
TIME RATING PER CHACTERISTIC |
75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM POWER SOURCE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| PMLC |
PRECIOUS MATERIAL AND LOCATION |
TERMINAL SURFACE OPTION GOLD |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CRHL |
BIT QUANTITY (NON-CORE) |
1024 |
| ADAQ |
BODY LENGTH |
0.840 INCHES MAXIMUM |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-2 MIL-M-38510 |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| ADAU |
BODY HEIGHT |
0.185 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
10 INPUT |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
739.0 MILLIWATTS |
| CSWJ |
WORD QUANTITY (NON-CORE) |
256 |
| CBBL |
FEATURES PROVIDED |
BURN IN AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE AND HERMETICALLY SEALED AND W/ACTIVE PULL-UP |