| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CZEQ |
TIME RATING PER CHACTERISTIC |
7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 6.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL |
| CBBL |
FEATURES PROVIDED |
POSITIVE OUTPUTS AND HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PRINTED CIRCUIT |
| ZZZK |
SPECIFICATION/STANDARD DATA |
81349-MIL-M-38510/330 GOVERNMENT SPECIFICATION |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-1 MIL-M-38510 |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| ADAQ |
BODY LENGTH |
0.785 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM POWER SOURCE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
56.0 MILLIWATTS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CQZP |
INPUT CIRCUIT PATTERN |
QUAD 2 INPUT |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.185 INCHES MAXIMUM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
4 GATE, NAND |