| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CQZP |
INPUT CIRCUIT PATTERN |
11 INPUT |
| ADAT |
BODY WIDTH |
6.1 MILLIMETERS MINIMUM AND 6.6 MILLIMETERS MAXIMUM |
| ADAQ |
BODY LENGTH |
19.0 MILLIMETERS MINIMUM AND 20.3 MILLIMETERS MAXIMUM |
| ADAU |
BODY HEIGHT |
4.5 MILLIMETERS NOMINAL |
| AFGA |
OPERATING TEMP RANGE |
-0.0/+70.0 DEG CELSIUS |
| AFJQ |
STORAGE TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM POWER SOURCE |
| CSWJ |
WORD QUANTITY (NON-CORE) |
16384 |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
140.0 MILLIWATTS |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CRHL |
BIT QUANTITY (NON-CORE) |
16384 |
| CBBL |
FEATURES PROVIDED |
W/ENABLE AND 3-STATE OUTPUT AND DYNAMIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQSJ |
INCLOSURE MATERIAL |
PLASTIC |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |