| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
140.00 MICROAMPERES REVERSE CURRENT, DC BLANK |
| TTQY |
TERMINAL TYPE AND QUANTITY |
28 PRINTED CIRCUIT |
| ADAT |
BODY WIDTH |
0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
15 INPUT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-10 MIL-M-38510 |
| CSWJ |
WORD QUANTITY (NON-CORE) |
8192 |
| ADAU |
BODY HEIGHT |
0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CBBL |
FEATURES PROVIDED |
MONOLITHIC AND PROGRAMMED AND W/DISABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE |
| ADAQ |
BODY LENGTH |
1.490 INCHES MAXIMUM |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZER |
MEMORY DEVICE TYPE |
PROM |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CRHL |
BIT QUANTITY (NON-CORE) |
65536 |
| ABHP |
OVERALL LENGTH |
1.490 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
170.0 MILLIWATTS |
| CZEQ |
TIME RATING PER CHACTERISTIC |
200.00 NANOSECONDS AF OUTPUT MEGAWATTS |
| ABKW |
OVERALL HEIGHT |
0.432 INCHES MAXIMUM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |