| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CBBL |
FEATURES PROVIDED |
HIGH PERFORMANCE AND W/ENABLE AND HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT |
| ADAU |
BODY HEIGHT |
0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
15 INPUT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
0.880 INCHES MINIMUM AND 0.920 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM POWER SOURCE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.2 WATTS |
| CSWJ |
WORD QUANTITY (NON-CORE) |
4096 |
| CRHL |
BIT QUANTITY (NON-CORE) |
4096 |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
ERR-060 NOMINAL HAND PULL AND ERR-060 NOMINAL HAND |
| CQWX |
OUTPUT LOGIC FORM |
METAL OXIDE-SEMICONDUCTOR LOGIC |
| TTQY |
TERMINAL TYPE AND QUANTITY |
18 PRINTED CIRCUIT |
| ADAT |
BODY WIDTH |
0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |