| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
+0.0/+70.0 DEG CELSIUS |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
STATIC RAM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
35.00 NANOSECONDS MAXIMUM ACCESS |
| ADAQ |
BODY LENGTH |
1.240 INCHES MINIMUM AND 1.280 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| ADAU |
BODY HEIGHT |
0.080 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
50.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| AGAV |
END ITEM IDENTIFICATION |
RECEIVING SET,SONAR AN/SQR-18A(V) |
| CRHL |
BIT QUANTITY (NON-CORE) |
16384 |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CBBL |
FEATURES PROVIDED |
HIGH RELIABILITY AND HIGH PERFORMANCE AND STATIC OPERATION AND HIGH SPEED AND LOW POWER AND BIDIRECTIONAL |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CSWJ |
WORD QUANTITY (NON-CORE) |
2048 |
| ABKW |
OVERALL HEIGHT |
0.080 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
22 INPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |