| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZEQ |
TIME RATING PER CHACTERISTIC |
55.00 NANOSECONDS MAXIMUM ACCESS |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,DIGITAL ERASABLE,PROGRAMMABLE LOGIC DEVICE |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-9 MIL-M-38510 |
| CZER |
MEMORY DEVICE TYPE |
PAL |
| AGAV |
END ITEM IDENTIFICATION |
1260-01-165-3959 |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CBBL |
FEATURES PROVIDED |
BIDIRECTIONAL AND BURN IN AND ELECTROSTATIC SENSITIVE AND ERASABLE AND PROGRAMMED |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ABMK |
OVERALL WIDTH |
0.290 INCHES MINIMUM AND 0.320 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
650.0 MILLIWATTS |
| ABKW |
OVERALL HEIGHT |
0.400 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZES |
HYBRID TECHNOLOGY TYPE |
MONOLITHIC |
| CQZP |
INPUT CIRCUIT PATTERN |
22 INPUT |
| ADAQ |
BODY LENGTH |
1.280 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.185 INCHES MAXIMUM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |