| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CRHL |
BIT QUANTITY (NON-CORE) |
8192 |
| ADAU |
BODY HEIGHT |
0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
12 INPUT |
| CBBL |
FEATURES PROVIDED |
HIGH IMPEDANCE AND BIPOLAR AND SCHOTTKY AND W/ACTIVE PULL-UP AND PROGRAMMED AND 3-STATE OUTPUT AND W/ENABLE |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
950.0 MILLIWATTS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
185.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE |
| ABHP |
OVERALL LENGTH |
0.960 INCHES MAXIMUM |
| CZER |
MEMORY DEVICE TYPE |
PROM |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CSWJ |
WORD QUANTITY (NON-CORE) |
2048 |
| ABKW |
OVERALL HEIGHT |
0.400 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| ADAQ |
BODY LENGTH |
0.960 INCHES MAXIMUM |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-6 MIL-M-38510 |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |