| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
1.290 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| ADAT |
BODY WIDTH |
0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-3 MIL-M-38510 |
| CQZP |
INPUT CIRCUIT PATTERN |
13 INPUT |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,DIGITAL,STATIC RAM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
90.00 NANOSECONDS MAXIMUM ACCESS |
| CRHL |
BIT QUANTITY (NON-CORE) |
16384 |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| AGAV |
END ITEM IDENTIFICATION |
6605-01-234-5840 |
| CSWJ |
WORD QUANTITY (NON-CORE) |
2048 |
| CBBL |
FEATURES PROVIDED |
BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED |
| ADAU |
BODY HEIGHT |
0.210 INCHES MAXIMUM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |