| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
40.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE |
| ADAQ |
BODY LENGTH |
1.290 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ADAT |
BODY WIDTH |
0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CZEP |
CAPITANCE RATING PER CHARACTERISTIC |
10.00 INPUT PICOFARADS MAXIMUM AND 7.00 OUTPUT PICOFARADS MAXIMUM |
| ABKW |
OVERALL HEIGHT |
0.425 INCHES MAXIMUM |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-3 MIL-M-38510 |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CSWJ |
WORD QUANTITY (NON-CORE) |
8192 |
| AGAV |
END ITEM IDENTIFICATION |
SATELLITE COMMUNICATIONS TERMINAL AN/USC-38(V)1 |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MINIMUM POWER SOURCE AND 8.0 VOLTS MAXIMUM POWER SOURCE |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CRHL |
BIT QUANTITY (NON-CORE) |
16384 |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CZEQ |
TIME RATING PER CHACTERISTIC |
130.00 NANOSECONDS MAXIMUM ACCESS |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| ABHP |
OVERALL LENGTH |
1.290 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
21 INPUT |
| CBBL |
FEATURES PROVIDED |
STATIC OPERATION AND MONOLITHIC AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND W/DISABLE |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
320.0 MILLIWATTS |