| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CZER |
MEMORY DEVICE TYPE |
EPROM |
| ADAT |
BODY WIDTH |
0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
200.00 NANOSECONDS MAXIMUM ACCESS |
| CZEP |
CAPITANCE RATING PER CHARACTERISTIC |
6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM |
| CRHL |
BIT QUANTITY (NON-CORE) |
131072 |
| TTQY |
TERMINAL TYPE AND QUANTITY |
20 PRINTED CIRCUIT |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
140.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-10 MIL-M-38510 |
| ADAU |
BODY HEIGHT |
0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CSWJ |
WORD QUANTITY (NON-CORE) |
16384 |
| ADAQ |
BODY LENGTH |
1.490 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
17 INPUT |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.6 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| CBBL |
FEATURES PROVIDED |
BURN IN AND HERMETICALLY SEALED AND MONOLITHIC AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |