| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
AND-OR INVERT GATE ARRAY |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-9 MIL-M-38510 |
| CZER |
MEMORY DEVICE TYPE |
PAL |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.2 WATTS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CQZP |
INPUT CIRCUIT PATTERN |
20 INPUT |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
105.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE |
| ADAQ |
BODY LENGTH |
1.280 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.185 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
BIDIRECTIONAL AND PROGRAMMABLE AND BIPOLAR AND HIGH IMPEDANCE AND W/CLOCK AND MONOLITHIC |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CZEQ |
TIME RATING PER CHACTERISTIC |
50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |