| AGAV |
END ITEM IDENTIFICATION |
AN/FPS-124 |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.3 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY AND 4.5 VOLTS MINIMUM POSITIVE POWER SUPPLY SPAN AND 5.5 VOLTS MAXIMUM POSITIVE POWER SUPPLY SPAN |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-3 MIL-M-38510 |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
100.00 MILLIAMPERES REVERSE CURRENT, DC NOMINAL |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| ZZZK |
SPECIFICATION/STANDARD DATA |
67268-82009 GOVERNMENT STANDARD AND 56232-1219253 MANUFACTURERS SPECIFICATION CONTROL |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CQWX |
OUTPUT LOGIC FORM |
BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZER |
MEMORY DEVICE TYPE |
PROM |
| CRHL |
BIT QUANTITY (NON-CORE) |
65536 |
| ZZZT |
NONDEFINITIVE SPEC/STD DATA |
02 TYPE AND J CASE AND A FINISH AND 201 NUMBER |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.04 WATTS |
| ZZZX |
DEPARTURE FROM CITED DESIGNATOR |
ALTERED BY PROGRAMMING,MARKING & TESTING |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,DIGITAL,SCHOTTKY,BIPOLAR 65,536 BIT (8K X 8) PROGRAMMABLE READ-ONLY MEMORY (PROM),MONOLITHIC SILICON |
| CZEQ |
TIME RATING PER CHACTERISTIC |
55.00 NANOSECONDS AF OUTPUT MEGAWATTS |
| CZES |
HYBRID TECHNOLOGY TYPE |
MONOLITHIC |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CBBL |
FEATURES PROVIDED |
PROGRAMMED AND SCHOTTKY |