| AGAV |
END ITEM IDENTIFICATION |
AN/FPS-124 |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-3 MIL-M-38510 |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
100.00 MILLIAMPERES REVERSE CURRENT, DC NOMINAL |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| ZZZK |
SPECIFICATION/STANDARD DATA |
67268-82009 GOVERNMENT STANDARD AND 56232-1219253 MANUFACTURERS SPECIFICATION CONTROL |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CQWX |
OUTPUT LOGIC FORM |
BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
55.00 NANOSECONDS NOMINAL ACCESS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.3 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY AND 4.5 VOLTS MINIMUM POSITIVE POWER SUPPLY SPAN AND 5.5 VOLTS MAXIMUM ABSOLUTE INPUT AND 5.5 VOLTS MAXIMUM POSITIVE POWER SUPPLY SPAN |
| CZER |
MEMORY DEVICE TYPE |
PROM |
| CRHL |
BIT QUANTITY (NON-CORE) |
65536 |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.04 WATTS |
| ZZZX |
DEPARTURE FROM CITED DESIGNATOR |
ALTERED BY PROGRAMMING,MARKING & TESTING |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,DIGITAL,SCHOTTKY,BIPOLAR 65,536 BIT (8K X 8) PROGRAMMABLE READ-ONLY MEMORY (PROM),MONOLITHIC SILICON |
| ZZZT |
NONDEFINITIVE SPEC/STD DATA |
02 TYPE AND J CASE AND A FINISH AND 204 NUMBER |
| CZES |
HYBRID TECHNOLOGY TYPE |
MONOLITHIC |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CBBL |
FEATURES PROVIDED |
PROGRAMMED AND SCHOTTKY |