| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.1 WATTS |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-8 MIL-M-38510 |
| TTQY |
TERMINAL TYPE AND QUANTITY |
20 PRINTED CIRCUIT |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
100.00 MILLIAMPERES REVERSE CURRENT, DC NOMINAL |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,BIPOLAR PAL 16-INPUT 4-OUTPUT REGISTERED AND-OR GATE ARRAY |
| CQWX |
OUTPUT LOGIC FORM |
BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-1.5 VOLTS MINIMUM ABSOLUTE INPUT AND 10.75 VOLTS MAXIMUM ABSOLUTE INPUT |
| CZER |
MEMORY DEVICE TYPE |
PAL |
| ZZZK |
SPECIFICATION/STANDARD DATA |
81349--38510/50604BRA GOVERNMENT SPECIFICATION |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CQZP |
INPUT CIRCUIT PATTERN |
16 INPUT |
| CBBL |
FEATURES PROVIDED |
BIPOLAR AND MONOLITHIC AND PROGRAMMED |
| AGAV |
END ITEM IDENTIFICATION |
ENDITEM E/I FSCM 03950 |
| CZES |
HYBRID TECHNOLOGY TYPE |
MONOLITHIC |
| ZZZX |
DEPARTURE FROM CITED DESIGNATOR |
ALTERED BY PROGRAMMING,TESTING & MARKING |
| ZZZP |
PURCHASE DESCRIPTION IDENTIFICATION |
05869-53210-1 |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |