| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CZEQ |
TIME RATING PER CHACTERISTIC |
100.00 NANOSECONDS AF OUTPUT MEGAWATTS AND 50.00 NANOSECONDS AF OUTPUT MEGAWATTS |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-3 MIL-M-38510 |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
100.00 MILLIAMPERES REVERSE CURRENT, DC NOMINAL |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| CBBL |
FEATURES PROVIDED |
PROGRAMMED AND SCHOTTKY AND HIGH IMPEDANCE |
| AGAV |
END ITEM IDENTIFICATION |
DEPOT SE RF T E/I FSCM 04939 |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CQWX |
OUTPUT LOGIC FORM |
BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| ZZZK |
SPECIFICATION/STANDARD DATA |
81349--38510/21002BJA GOVERNMENT SPECIFICATION |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.02 WATTS |
| CRHL |
BIT QUANTITY (NON-CORE) |
16384 |
| CZER |
MEMORY DEVICE TYPE |
PROM |
| ZZZP |
PURCHASE DESCRIPTION IDENTIFICATION |
04939-717744154-009 |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-1.5 VOLTS MINIMUM ABSOLUTE INPUT AND 5.5 VOLTS MAXIMUM ABSOLUTE INPUT |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,DIGITAL,16,384 BIT SCHOTTKY,BIPOLAR PROM |
| CZES |
HYBRID TECHNOLOGY TYPE |
MONOLITHIC |
| ZZZX |
DEPARTURE FROM CITED DESIGNATOR |
ALTERED BY PROGRAMMING,TESTING & MARKING |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |