| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD |
| CRHL |
BIT QUANTITY (NON-CORE) |
8192 |
| CZEP |
CAPITANCE RATING PER CHARACTERISTIC |
12.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM |
| ZZZT |
NONDEFINITIVE SPEC/STD DATA |
06 TYPE AND X CASE AND C FINISH |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CBBL |
FEATURES PROVIDED |
TESTED TO MIL-STD-883 |
| ZZZK |
SPECIFICATION/STANDARD DATA |
67268-5962-86875 GOVERNMENT STANDARD |
| TTQY |
TERMINAL TYPE AND QUANTITY |
48 PRINTED CIRCUIT |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-14 MIL-M-38510 |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
70.00 NANOSECONDS AF OUTPUT MEGAWATTS |
| AGAV |
END ITEM IDENTIFICATION |
EO LOROPS E/I FSCM 72314 |
| ADAU |
BODY HEIGHT |
0.165 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,MEMORY,DIGITAL,1K X 8 DUAL PORT,CMOS SRAM,MONOLITHIC SILICON |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
50.00 MILLIAMPERES REVERSE CURRENT, DC NOMINAL |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.5 WATTS |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| ADAT |
BODY WIDTH |
0.510 INCHES MINIMUM AND 0.620 INCHES MAXIMUM |
| ADAQ |
BODY LENGTH |
2.435 INCHES MAXIMUM |
| CZES |
HYBRID TECHNOLOGY TYPE |
MONOLITHIC |
| CSWJ |
WORD QUANTITY (NON-CORE) |
1024 |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |