| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,PROGRAMMED |
| ADAQ |
BODY LENGTH |
1.260 INCHES MINIMUM AND 1.280 INCHES MAXIMUM |
| FEAT |
SPECIAL FEATURES |
ELECTROSTATIC DISCHARGE SENSITIVE; ALTERED ITEM,MAKE FROM 5962-8686401LX,CHECKSUM FF11; NHA PN 1372AE1062,5998-01-358-7044 CIRCUIT CARD ASSY |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| CZEQ |
TIME RATING PER CHACTERISTIC |
55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-9 MIL-M-38510 |
| CZER |
MEMORY DEVICE TYPE |
PAL |
| ADAT |
BODY WIDTH |
0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM POWER SOURCE |
| AGAV |
END ITEM IDENTIFICATION |
EO LOROPS |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CBBL |
FEATURES PROVIDED |
PROGRAMMED AND BURN IN AND HERMETICALLY SEALED AND ELECTROSTATIC SENSITIVE AND W/CLOCK |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
650.0 MILLIWATTS |
| CRTL |
CRITICALITY CODE JUSTIFICATION |
FEAT |
| ADAU |
BODY HEIGHT |
0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
22 INPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |