| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT MEMORY 32K PROM |
| FEAT |
SPECIAL FEATURES |
NUCLEAR HARDNESS CRITICAL ITEM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
40.00 NANOSECONDS AF OUTPUT MEGAWATTS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-3 MIL-M-38510 |
| CRHL |
BIT QUANTITY (NON-CORE) |
32768 |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.3 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
| ZZZK |
SPECIFICATION/STANDARD DATA |
67268-8200803JA GOVERNMENT STANDARD AND 03640-123A879-4 MANUFACTURERS SOURCE CONTROL |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
100.00 MILLIAMPERES REVERSE CURRENT, DC NOMINAL |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CQWX |
OUTPUT LOGIC FORM |
BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CSWJ |
WORD QUANTITY (NON-CORE) |
4096 |
| ZZZX |
DEPARTURE FROM CITED DESIGNATOR |
ALTERED BY PROGRAMMING & MARKING |
| CZER |
MEMORY DEVICE TYPE |
PROM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.04 WATTS |
| CRTL |
CRITICALITY CODE JUSTIFICATION |
FEAT |
| CZES |
HYBRID TECHNOLOGY TYPE |
MONOLITHIC |
| AGAV |
END ITEM IDENTIFICATION |
VALVE-SELECTI E/I FSCM 70339 |
| CBBL |
FEATURES PROVIDED |
PROGRAMMED AND BIPOLAR AND RADIATION HARDENED AND SCHOTTKY |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |