| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CZEQ |
TIME RATING PER CHACTERISTIC |
20.00 NANOSECONDS AF OUTPUT MEGAWATTS |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT MEMORY,22-INPUT 10-OUTPUT AND-OR-LOGIC ARRAY |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-1835 STANDARD AND 81349-MIL-I-43553 SPECIFICATION AND 96906-MIL-STD-883 STANDARD AND 96906-MIL-STD-1285 STANDARD |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-9 MIL-M-38510 |
| CZER |
MEMORY DEVICE TYPE |
PAL |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.2 WATTS |
| ZZZX |
DEPARTURE FROM CITED DESIGNATOR |
ALTERED BY PROGRAMMING & MARKING |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-2.0 VOLTS MINIMUM ABSOLUTE INPUT AND -0.5 VOLTS MINIMUM ABSOLUTE OUTPUT AND -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE OUTPUT |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| ZZZK |
SPECIFICATION/STANDARD DATA |
67268-5962-8753904LA GOVERNMENT STANDARD AND 07690-639167-01 MANUFACTURERS SOURCE CONTROL |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
16.00 MILLIAMPERES REVERSE CURRENT, DC NOMINAL |
| CBBL |
FEATURES PROVIDED |
PROGRAMMED AND ULTRAVIOLET ERASABLE AND W/RESET |
| CZES |
HYBRID TECHNOLOGY TYPE |
MONOLITHIC |
| AGAV |
END ITEM IDENTIFICATION |
5840013274413 E/I FSCM 07690 |
| CQZP |
INPUT CIRCUIT PATTERN |
22 INPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |