| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
1.260 INCHES MINIMUM AND 1.280 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUITS,DIGITAL,CMOS 8K X 8 UV EPROM,MONOLITHIC SILICON; MICROCIRCUIT,PROGRAMMED |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CSWJ |
WORD QUANTITY (NON-CORE) |
8192 |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-9 MIL-M-38510 |
| ADAT |
BODY WIDTH |
0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| FEAT |
SPECIAL FEATURES |
ELECTROSTATIC DISCHARGE SENSITIVE; ALTERED ITEM,MADE FROM PN 5962-8751505LA,FILENAME 1058-U36.P82,CHECKSUM 05FC50; NHA PN 1372AE1058 |
| AGAV |
END ITEM IDENTIFICATION |
EO LOROPS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY |
| CZER |
MEMORY DEVICE TYPE |
PROGRAMMED |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CRHL |
BIT QUANTITY (NON-CORE) |
65536 |
| CZEQ |
TIME RATING PER CHACTERISTIC |
45.00 NANOSECONDS NOMINAL ACCESS |
| CRTL |
CRITICALITY CODE JUSTIFICATION |
FEAT |
| ADAU |
BODY HEIGHT |
0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMED AND ELECTROSTATIC SENSITIVE AND BURN IN, MIL-STD-883, CLASS B |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |