| ADAT |
BODY WIDTH |
0.245 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZEP |
CAPITANCE RATING PER CHARACTERISTIC |
6.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| AFGA |
OPERATING TEMP RANGE |
-40.0/+85.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
0.900 INCHES MINIMUM AND 0.920 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
7.0 VOLTS MAXIMUM POWER SOURCE |
| CQZP |
INPUT CIRCUIT PATTERN |
16 INPUT |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
10.00 MICROAMPERES REVERSE CURRENT, DC BLANK |
| ADAU |
BODY HEIGHT |
0.125 INCHES MINIMUM AND 0.140 INCHES MAXIMUM |
| CRHL |
BIT QUANTITY (NON-CORE) |
1024 |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CBBL |
FEATURES PROVIDED |
BIDIRECTIONAL AND ELECTROSTATIC SENSITIVE AND STATIC OPERATION AND SYNCHRONOUS AND HIGH PERFORMANCE AND W/BUFFERED OUTPUT AND LOW POWER AND HIGH IMPEDANCE |
| CZEQ |
TIME RATING PER CHACTERISTIC |
220.00 NANOSECONDS MAXIMUM ACCESS |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
18 PRINTED CIRCUIT |
| CQSJ |
INCLOSURE MATERIAL |
PLASTIC |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CSWJ |
WORD QUANTITY (NON-CORE) |
256 |