| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD |
| ZZZW |
DEPARTURE FROM CITED DOCUMENT |
ALTERED BY PROGRAMMING & MARKING |
| CZER |
MEMORY DEVICE TYPE |
EPROM |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
125.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE |
| AGAV |
END ITEM IDENTIFICATION |
AN/TYQ-23(V)1 E/I FSCM 13973 |
| TTQY |
TERMINAL TYPE AND QUANTITY |
28 PRINTED CIRCUIT |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT DIGITAL,262,144 BIT,MOS,EPROM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.6 VOLTS MINIMUM ABSOLUTE INPUT AND 6.25 VOLTS MAXIMUM ABSOLUTE INPUT |
| ZZZP |
PURCHASE DESCRIPTION IDENTIFICATION |
13973-247513-135 |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-10 MIL-M-38510 |
| CRHL |
BIT QUANTITY (NON-CORE) |
262144 |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CBBL |
FEATURES PROVIDED |
ELECTROSTATIC SENSITIVE AND PROGRAMMED AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND W/TRANSPARENT LID |
| CZES |
HYBRID TECHNOLOGY TYPE |
MONOLITHIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
200.00 NANOSECONDS AF OUTPUT MEGAWATTS |
| ZZZK |
SPECIFICATION/STANDARD DATA |
81349--38510/22402BYA GOVERNMENT SPECIFICATION |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |