| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CZER |
MEMORY DEVICE TYPE |
EPROM |
| ADAU |
BODY HEIGHT |
0.200 INCHES MINIMUM AND 0.220 INCHES MAXIMUM |
| NHCF |
NUCLEAR HARDNESS CRITICAL FEATURE |
HARDENED |
| ADAQ |
BODY LENGTH |
1.660 INCHES MINIMUM AND 1.680 INCHES MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
330.0 MILLIWATTS |
| TTQY |
TERMINAL TYPE AND QUANTITY |
32 PRINTED CIRCUIT |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.6 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZZZ |
MEMORY CAPACITY |
128K X 8 |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,PROM,128K X 8 (27C010); MICROCIRCUIT,MEMORY DIGITAL,CMOS 128K X 8-BIT UVEPROM,MONOLITHIC SILICON |
| FEAT |
SPECIAL FEATURES |
ELECTROSTATIC DISCHARGE SENS/HARDNESS CRITICAL ITEM; SELECTED ITEM; SELECTED FROM P/N 5962-8961404MXX OR 5962-8961405MXX,CAGE 67268 |
| SPCL |
SPECIAL TEST FEATURES |
SELECTED AND TESTED FOR RADIATION HARDNESS |
| CBBL |
FEATURES PROVIDED |
ELECTROSTATIC SENSITIVE AND MONOLITHIC AND RADIATION HARDENED AND ULTRAVIOLET ERASABLE AND TESTED TO MIL-STD-883 AND BURN IN, MIL-STD-883, CLASS B AND SELECTED ITEM |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
5.00 MICROAMPERES MAXIMUM INPUT |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| ADAT |
BODY WIDTH |
0.585 INCHES MINIMUM AND 0.605 INCHES MAXIMUM |
| CRTL |
CRITICALITY CODE JUSTIFICATION |
FEAT |
| AGAV |
END ITEM IDENTIFICATION |
HAC/RMPE REACT BASIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
150.00 NANOSECONDS MINIMUM ACCESS AND 170.00 NANOSECONDS MAXIMUM ACCESS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |