| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM INPUT AND -1.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
6 BUFFER, NONINVERTING |
| ADAQ |
BODY LENGTH |
0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM |
| CRTL |
CRITICALITY CODE JUSTIFICATION |
CBBL |
| ADAT |
BODY WIDTH |
0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
C-2 MIL-M-38510 |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,DIGITAL,BIPOLAR ADVANCED LOW POWER SCHOTTKY,TTL,HEX NONINVERTING BUFFERS,MONOLITHIC SILICON |
| AGAV |
END ITEM IDENTIFICATION |
F-16 |
| CBBL |
FEATURES PROVIDED |
MONOLITHIC AND HERMETICALLY SEALED AND ELECTROSTATIC SENSITIVE AND BURN IN, MIL-STD-883, CLASS B AND BIPOLAR AND TESTED TO MIL-STD-883 AND LOW POWER AND SCHOTTKY AND W/OPEN COLLECTOR |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
2.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
14.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE AND -0.10 MILLIAMPERES REVERSE CURRENT, DC MICROAMPERES |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CQSZ |
INCLOSURE CONFIGURATION |
LEADLESS FLAT PACK |
| CQZP |
INPUT CIRCUIT PATTERN |
6 INPUT |
| ADAU |
BODY HEIGHT |
0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
77.0 MILLIWATTS |
| TTQY |
TERMINAL TYPE AND QUANTITY |
20 LEADLESS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |