| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MINIMUM INPUT AND 5.5 VOLTS MAXIMUM INPUT AND -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| ADAU |
BODY HEIGHT |
0.200 INCHES MAXIMUM |
| AGAV |
END ITEM IDENTIFICATION |
PACER DAWN |
| CQZP |
INPUT CIRCUIT PATTERN |
14 INPUT |
| CRTL |
CRITICALITY CODE JUSTIFICATION |
CBBL |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT, DIGITAL, 2K X 8, PRODUCTION I553 EXTENDED MICROCODE PROM;MICROCIRCUIT, DIGITAL, BIPOLAR, 2K X 8 BIT REGISTERED PROM, MONOLITHIC SILICON |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CZEP |
CAPITANCE RATING PER CHARACTERISTIC |
8.00 INPUT PICOFARADS MAXIMUM AND 15.00 OUTPUT PICOFARADS MAXIMUM |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-9 MIL-M-38510 |
| CQWX |
OUTPUT LOGIC FORM |
BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
-30.00 MILLIAMPERES COLLECTOR CUTOFF CURRENT, DC, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER MICROAMPERES AND 5.00 MILLIAMPERES REVERSE CURRENT, DC MICROAMPERES |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.02 WATTS |
| CRHL |
BIT QUANTITY (NON-CORE) |
16384 |
| CZER |
MEMORY DEVICE TYPE |
PROM |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CZEQ |
TIME RATING PER CHACTERISTIC |
25.00 NANOSECONDS AF OUTPUT TORR |
| CSWJ |
WORD QUANTITY (NON-CORE) |
2048 |
| FEAT |
SPECIAL FEATURES |
ALTERED ITEM PROGRAMMED USING 67268 5962-8552702LX IAW PG639700-01 |
| CBBL |
FEATURES PROVIDED |
PROGRAMMED AND MONOLITHIC AND HERMETICALLY SEALED AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ASYNCHRONOUS AND TESTED TO MIL-STD-883 |
| ADAQ |
BODY LENGTH |
1.280 INCHES MAXIMUM |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| ADAT |
BODY WIDTH |
0.310 INCHES MAXIMUM |