| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZEQ |
TIME RATING PER CHACTERISTIC |
55.00 NANOSECONDS MAXIMUM ACCESS |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| FEAT |
SPECIAL FEATURES |
ALTERED ITEM MADE FROM 67268 5962-8953702YX;CASE OUTLINE SOURCE AND DESIGNATOR IS MIL-STD-1835 CDIP3-T28 OR GDIP4-T28 |
| CZER |
MEMORY DEVICE TYPE |
EPROM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
28 PRINTED CIRCUIT |
| ADAT |
BODY WIDTH |
0.225 INCHES MAXIMUM |
| CRHL |
BIT QUANTITY (NON-CORE) |
131072 |
| ADAQ |
BODY LENGTH |
1.485 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| CQZP |
INPUT CIRCUIT PATTERN |
14 INPUT |
| CZEP |
CAPITANCE RATING PER CHARACTERISTIC |
10.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM |
| CRTL |
CRITICALITY CODE JUSTIFICATION |
CBBL |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| AGAV |
END ITEM IDENTIFICATION |
AGM 130 |
| CBBL |
FEATURES PROVIDED |
BEAM LEAD CHIP AND BURN IN, MIL-STD-883, CLASS B AND ERASABLE AND TESTED TO MIL-STD-883 AND PROGRAMMED AND MONOLITHIC AND ULTRAVIOLET ERASABLE |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT-ERASEABLE PROGRAMMABLE READ ONLY MEMORY |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-15 MIL-M-38510 |
| CSWJ |
WORD QUANTITY (NON-CORE) |
16384 |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
120.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE AND 35.00 MILLIAMPERES REVERSE CURRENT, DC BLANK |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| ADAU |
BODY HEIGHT |
0.240 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE AND -3.0 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |