| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| ADAU |
BODY HEIGHT |
0.200 INCHES MAXIMUM |
| FEAT |
SPECIAL FEATURES |
ALTERED ITEM PROGRAMMED USING 67268/5962-8851501RX USING VERSION OR FIRMWARE DESCRIPTION DOCUMENT VDD0236.02..01 |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
303.0 MILLIWATTS |
| AGAV |
END ITEM IDENTIFICATION |
PACER DAWN |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
D-8 MIL-M-38510 |
| CRTL |
CRITICALITY CODE JUSTIFICATION |
CBBL |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CQWX |
OUTPUT LOGIC FORM |
BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CZER |
MEMORY DEVICE TYPE |
PAL |
| ADAQ |
BODY LENGTH |
1.060 INCHES MAXIMUM |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CQSJ |
INCLOSURE MATERIAL |
SILICON |
| CBBL |
FEATURES PROVIDED |
PROGRAMMED AND TESTED TO MIL-STD-883 AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND ERASABLE |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MCKT,DIGITAL BIPOLAR,PROGRAMMABLEARRAY LOGIC |
| TTQY |
TERMINAL TYPE AND QUANTITY |
20 FLAT LEADS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| ADAT |
BODY WIDTH |
0.310 INCHES MAXIMUM |