| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| TTQY |
TERMINAL TYPE AND QUANTITY |
28 PRINTED CIRCUIT |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
1.0 WATTS |
| CRTL |
CRITICALITY CODE JUSTIFICATION |
CBBL |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CBBL |
FEATURES PROVIDED |
ELECTROSTATIC SENSITIVE AND MONOLITHIC AND STATIC OPERATION |
| CSWJ |
WORD QUANTITY (NON-CORE) |
8192 |
| FEAT |
SPECIAL FEATURES |
DESCRIPTIVE DESIGNATOR CDIP3-T28 OR GDIP4-T28; CIRCUIT FUNCTION 8K X 8 NVSRAM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.6 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
| CZEQ |
TIME RATING PER CHACTERISTIC |
55.00 NANOSECONDS NOMINAL ACCESS |
| AGAV |
END ITEM IDENTIFICATION |
F-15I |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
15.00 MILLIAMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE NOT APPLICABLE |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
96906-MIL-STD-883 STANDARD |
| CQSJ |
INCLOSURE MATERIAL |
SILICON |
| CRHL |
BIT QUANTITY (NON-CORE) |
65536 |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,MEMORY,DIGITAL,CMOS,2K X 8 NON-VOLATILE STATIC RAM,MONOLITHIC SILICON |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |