| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
1 MEMORY, ELECTRICALLY ERASABLE PROGRAMMABLE ROM |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
4.5 VOLTS MINIMUM OUTPUT AND 5.5 VOLTS MAXIMUM OUTPUT |
| ADAQ |
BODY LENGTH |
9.2 MILLIMETERS MINIMUM AND 9.9 MILLIMETERS MAXIMUM |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| CZEP |
CAPITANCE RATING PER CHARACTERISTIC |
6.00 INPUT PICOFARADS NOMINAL |
| ADAU |
BODY HEIGHT |
3.3 MILLIMETERS MINIMUM AND 5.3 MILLIMETERS MAXIMUM |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
2.00 MILLIAMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE ABSOLUTE |
| TTQY |
TERMINAL TYPE AND QUANTITY |
8 PIN |
| CZEQ |
TIME RATING PER CHACTERISTIC |
300.00 NANOSECONDS NOMINAL FALL |
| CQWX |
OUTPUT LOGIC FORM |
COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| ADAT |
BODY WIDTH |
6.0 MILLIMETERS MINIMUM AND 6.7 MILLIMETERS MAXIMUM |
| CZZZ |
MEMORY CAPACITY |
256K X 8 |
| AFGA |
OPERATING TEMP RANGE |
-40.0/+125.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
PLASTIC |