5962-01-515-6598 ( SI4435DY , SI4435DY )

NSN Information
NSN FSC NIIN Item Name INC
5962-01-515-6598 5962 015156598 MICROCIRCUIT,DIGITAL 3177
NSN Features
MRC Parameter Characteristics
CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE
ABKW OVERALL HEIGHT 1.35 MILLIMETERS MINIMUM AND 1.75 MILLIMETERS MAXIMUM
CZEQ TIME RATING PER CHACTERISTIC 30.00 NANOSECONDS MAXIMUM ON AND 120.00 NANOSECONDS MAXIMUM OFF
TTQY TERMINAL TYPE AND QUANTITY 8 GULLWING
CQWX OUTPUT LOGIC FORM P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
AEHX MAXIMUM POWER DISSIPATION RATING 2.5 WATTS
CXCY PART NAME ASSIGNED BY CONTROLLING AGENCY P-CHANNEL, 30 VOLT (D-S), METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET)
ABMK OVERALL WIDTH 5.8 MILLIMETERS MINIMUM AND 6.2 MILLIMETERS MAXIMUM
ADAT BODY WIDTH 3.8 MILLIMETERS MINIMUM AND 4.0 MILLIMETERS MAXIMUM
ADAQ BODY LENGTH 4.8 MILLIMETERS MINIMUM AND 5.0 MILLIMETERS MAXIMUM
CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -30.0 VOLTS MAXIMUM DRAIN SOURCE
FEAT SPECIAL FEATURES NOT RECOMMENDED FOR NEW DESIGN, USE PART NUMBER SI4435BDY, CAGE 17856
AFGA OPERATING TEMP RANGE -55.0/+150.0 DEG CELSIUS
Manufacturing Part Numbers (SKUs)
Part SKU Cage Status RNVC RNCC SADC DAC RNAAC
SI4435DY 17856 A 2 3 4 9Z
SI4435DY 1NTS2 A 9 5 6 9Z
Manufacturers
Part SKU Cage Manufacturer Type Status
SI4435DY 17856 SILICONIX INCORPORATED A A
SI4435DY 1NTS2 TEMIC SEMICONDUCTORS N A CORP F A
FLIS Identification
PMIC ADPE Code CRITL Code DEMIL Code DEMIL INTG NIIN Asgt ESD HMIC ENAC Schedule-B INC
A 0 X A 1 12/03/2 A N 8542900000 3177
FLIS Management
MOE REC Rep Code Mgmt Ctl USC Phrase Code Phrase Statement
DN 9B----- N
DS I
Demilitarization Codes & Management
DML PMI HMIC ADP CC ESDC
A A N 0 X A
Miscellaneous Management
MOE (S_A) SOS AAC QUP UI SLC CIIC RC MCC SVC
DS SMS Z 1 EA 0 U D
DN SMS Z 1 EA 0 U 9B----- N
Management Control Army
MATCAT 1 MATCAT 2 MATCAT 3 MATCAT 4 5 ARC
Freight
NMFC NMFC SUB UFC HMC LTL LCL WCC TCC SHC ADC ACC ASH NMF DESC