| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZEQ |
TIME RATING PER CHACTERISTIC |
55.00 NANOSECONDS MAXIMUM ACCESS |
| AFGA |
OPERATING TEMP RANGE |
-55.0/+125.0 DEG CELSIUS |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND BIPOLAR AND ELECTROSTATIC SENSITIVE AND W/OPEN COLLECTOR AND W/ENABLE |
| CXCY |
PART NAME ASSIGNED BY CONTROLLING AGENCY |
MICROCIRCUIT,DIGITAL-BIPOLARRAM |
| CQZP |
INPUT CIRCUIT PATTERN |
14 INPUT |
| CZZZ |
MEMORY CAPACITY |
256 K X1 |
| AFJQ |
STORAGE TEMP RANGE |
-65.0/+150.0 DEG CELSIUS |
| ADAT |
BODY WIDTH |
0.240 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| AGAV |
END ITEM IDENTIFICATION |
FWD FUSELAG F-15 |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| ADAU |
BODY HEIGHT |
0.180 INCHES MAXIMUM |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
115.00 MILLIAMPERES REVERSE CURRENT, DC ABSOLUTE |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE AND -0.5 VOLTS MAXIMUM INPUT AND 5.5 VOLTS MAXIMUM INPUT |